AM2302N v ds (v) i d (a) 3.4 3.0 symbol limit units v ds 20 v gs 8 t a =25c 3.4 t a =70c 2.7 i dm 10 i s 1.6 a t a =25c 1.3 t a =70c 0.8 t j , t stg -55 to 150 c symbol maximum units 100 166 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature pulsed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-source voltage maximum junction-to-ambient a continuous drain current a product summary 20 r ds(on) (m) 76 @ v gs = 4.5v 103 @ v gs = 2.5v gate-source voltage power dissipation a t <= 10 sec steady state r ja i d a p d w key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 ua 0.4 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 16 v, v gs = 0 v 1 v ds = 16 v, v gs = 0 v, t j = 55c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 5 a v gs = 4.5 v, i d = 2.7 a 76 v gs = 2.5 v, i d = 2.2 a 103 forward transconductance a g fs v ds = 15 v, i d = 2.7 a 8 s diode forward voltage a v sd i s = 0.8 a, v gs = 0 v 0.77 v total gate charge q g 1.8 gate-source charge q gs 0.2 gate-drain charge q gd 0.6 turn-on delay time t d(on) 7 rise time t r 15 turn-off delay time t d(off) 25 fall time t f 11 input capacitance c iss 73 output capacitance c oss 25 reverse transfer capacitance c rss 20 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. dynamic b ns zero gate voltage drain current static ua electrical characteristics i dss m r ds(on) nc v ds = 10 v, r l = 3.8 , i d = 2.7 a, v gen = 4.5 v, r gen = 6 v ds = 10 v, v gs = 4.5 v, i d = 2.7 a drain-source on-resistance a pf v ds = 15 v, v gs = 0 v, f = 1 mhz 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM2302N product specification
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